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基于GaAs(001)衬底的CdTe缓冲层和HgTe多层膜的分子束外延生长及其运输行为
余之峰
Subtype博士后
2021-10
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2021-10
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30553
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
余之峰. 基于GaAs(001)衬底的CdTe缓冲层和HgTe多层膜的分子束外延生长及其运输行为[D]. 中国科学院半导体研究所. 中国科学院大学,2021.
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