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基于激光器结构的InGaN材料发光特性和外延机理研究
彭莉媛
Subtype博士
2021-06
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2021-06
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30243
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
彭莉媛. 基于激光器结构的InGaN材料发光特性和外延机理研究[D]. 中国科学院半导体研究所. 中国科学院大学,2021.
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2021081-公开-博士-光电研发-彭(129055KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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