SEMI OpenIR  > 半导体超晶格国家重点实验室
硅的反常空穴迁移率起源及高空穴迁移率的设计原理
杨巧林
Subtype硕士
2021-05
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2021-05
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30224
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
杨巧林. 硅的反常空穴迁移率起源及高空穴迁移率的设计原理[D]. 中国科学院半导体研究所. 中国科学院大学,2021.
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2021034-公开-硕士-超晶格-杨巧(2585KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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