SEMI OpenIR  > 中科院半导体材料科学重点实验室
GaSb原生受主缺陷对施掺杂激活及其器件应用的影响
余丁
Subtype硕士
2019-06
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28884
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
余丁. GaSb原生受主缺陷对施掺杂激活及其器件应用的影响[D]. 中国科学院半导体研究所. 中国科学院大学,2019.
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2009007-余丁-硕士-GaSb原生(3273KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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