SEMI OpenIR  > 中科院半导体材料科学重点实验室
4H-SiC场效应晶体管的仿真设计与沟槽型MOSFET的研制
申占伟
Subtype博士
Thesis Advisor孙国胜 ; 张峰
2017-05-31
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Keyword4h-sic 场效应晶体管 No退火 Umosfet 欧姆接触 槽角圆弧化 米勒电容
Subject Area半导体器件 ; 微电子学
Language中文
Date Available2017-06-02
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28194
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
申占伟. 4H-SiC场效应晶体管的仿真设计与沟槽型MOSFET的研制[D]. 北京. 中国科学院研究生院,2017.
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All comments (1)
闫俊达
2017-06-05 10:37
 

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