SEMI OpenIR  > 半导体材料科学中心
4H -SiC 基 SiO 2和 Al 2O3栅介质层的研究
田丽欣
Subtype博士
Thesis Advisor孙国胜
2016-11
Degree Grantor中国科学院半导体研究所
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Date Available2016-12-05
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27665
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
田丽欣. 4H -SiC 基 SiO 2和 Al 2O3栅介质层的研究[D]. 北京. 中国科学院半导体研究所,2016.
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