一种高功率密度半导体激光器热沉 | |
仲莉; 张俊杰; 罗泓; 井红旗; 祁琼; 刘素平; 马骁宇 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-28 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2015-02-12 |
Application Number | CN201510075853.6 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27588 |
Collection | 光电子器件国家工程中心 |
Recommended Citation GB/T 7714 | 仲莉,张俊杰,罗泓,等. 一种高功率密度半导体激光器热沉. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
一种高功率密度半导体激光器热沉.pdf(645KB) | 限制开放 | License | Application Full Text |
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