SEMI OpenIR  > 光电子器件国家工程中心
一种高功率密度半导体激光器热沉
仲莉; 张俊杰; 罗泓; 井红旗; 祁琼; 刘素平; 马骁宇
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体器件
Application Date2015-02-12
Application NumberCN201510075853.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27588
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
仲莉,张俊杰,罗泓,等. 一种高功率密度半导体激光器热沉.
Files in This Item:
File Name/Size DocType Version Access License
一种高功率密度半导体激光器热沉.pdf(645KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[仲莉]'s Articles
[张俊杰]'s Articles
[罗泓]'s Articles
Baidu academic
Similar articles in Baidu academic
[仲莉]'s Articles
[张俊杰]'s Articles
[罗泓]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[仲莉]'s Articles
[张俊杰]'s Articles
[罗泓]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.