SEMI OpenIR  > 中科院半导体材料科学重点实验室
掩模板、套刻对准方法及制备脊形波导激光器的方法
吴艳华; 王飞飞; 胡发杰; 金鹏; 王占国
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-12-23
Application NumberCN201410815582.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27446
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
吴艳华,王飞飞,胡发杰,等. 掩模板、套刻对准方法及制备脊形波导激光器的方法.
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掩模板、套刻对准方法及制备脊形波导激光器(1762KB) 限制开放LicenseApplication Full Text
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