SEMI OpenIR  > 中科院半导体材料科学重点实验室
制作InSb红外探测器的材料结构及制备方法
赵晓蒙; 张杨; 曾一平
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-09-10
Application NumberCN201510573693.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27434
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵晓蒙,张杨,曾一平. 制作InSb红外探测器的材料结构及制备方法.
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