SEMI OpenIR  > 纳米光电子实验室
一种高响应度雪崩光电二极管制备方法
陈良惠; 李慧梅; 李晓敏; 李健; 于海龙; 宋国峰; 徐云
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-08-31
Application NumberCN201510547504.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27430
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
陈良惠,李慧梅,李晓敏,等. 一种高响应度雪崩光电二极管制备方法.
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