SEMI OpenIR  > 中科院半导体材料科学重点实验室
4H-SiC快速外延生长研究
刘斌
Subtype博士
Thesis Advisor孙国胜
2015-05
Degree Grantor中国科学院大学
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Keyword4h-sic 碳化硅 快速外延生长 Fast Epitaxial Growth
Subject Area微电子学
Date Available2015-06-02
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26569
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘斌. 4H-SiC快速外延生长研究[D]. 北京. 中国科学院大学,2015.
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