SEMI OpenIR  > 纳米光电子实验室
一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法
郭晓璐; 马文全; 张艳华
Rights Holder中国科学院半导体研究所
Date Available2013-08-07
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-04-18
Application NumberCN201310135986.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25783
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
郭晓璐,马文全,张艳华. 一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法.
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