SEMI OpenIR  > 中科院半导体材料科学重点实验室
硅衬底上生长纳米线的衬底处理方法
杨涛; 王小耶
Rights Holder中国科学院半导体研究所
Date Available2014-05-14
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-01-29
Application NumberCN201410043865.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25779
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
杨涛,王小耶. 硅衬底上生长纳米线的衬底处理方法.
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