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半导体薄膜太阳能电池前后表面的陷光结构制备方法
时彦朋; 王晓东; 刘雯; 杨添舒; 马静; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2014-05-21
Country中国
Subtype发明
Subject Area微电子学
Application Date2014-02-17
Application NumberCN201410052413.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25769
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
时彦朋,王晓东,刘雯,等. 半导体薄膜太阳能电池前后表面的陷光结构制备方法.
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半导体薄膜太阳能电池前后表面的陷光结构制(487KB) 限制开放LicenseApplication Full Text
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