SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种高Al组分AlGaN薄膜的制备方法
毛德丰; 李维; 王维颖; 金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2014-05-21
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-02-19
Application NumberCN201410056560.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25750
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
毛德丰,李维,王维颖,等. 一种高Al组分AlGaN薄膜的制备方法.
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