SEMI OpenIR  > 纳米光电子实验室
近零偏时半导体红外光电探测器表面暗电流的测量方法
李琼; 马文全; 张艳华; 黄建亮
Rights Holder中国科学院半导体研究所
Date Available2014-07-30
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-03-28
Application NumberCN201410121021.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25732
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
李琼,马文全,张艳华,等. 近零偏时半导体红外光电探测器表面暗电流的测量方法.
Files in This Item:
File Name/Size DocType Version Access License
近零偏时半导体红外光电探测器表面暗电流的(617KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李琼]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Baidu academic
Similar articles in Baidu academic
[李琼]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李琼]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.