表面等离激元增强型硅纳米线电致发光器件及其制作方法 | |
陈弘达; 王真真; 解意洋; 耿照新 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2014-08-20 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 光电子学 |
Application Date | 2014-04-21 |
Application Number | CN201410164442.X |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25704 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | 陈弘达,王真真,解意洋,等. 表面等离激元增强型硅纳米线电致发光器件及其制作方法. |
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File Name/Size | DocType | Version | Access | License | ||
表面等离激元增强型硅纳米线电致发光器件及(431KB) | 限制开放 | License | Application Full Text |
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