| 表面等离激元增强型硅纳米线电致发光器件及其制作方法 | |
| 陈弘达; 王真真; 解意洋; 耿照新 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-08-20 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2014-04-21 |
| Application Number | CN201410164442.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25704 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 陈弘达,王真真,解意洋,等. 表面等离激元增强型硅纳米线电致发光器件及其制作方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 表面等离激元增强型硅纳米线电致发光器件及（431KB） | 限制开放 | License | Application Full Text | |||
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