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表面等离激元增强型硅纳米线电致发光器件及其制作方法
陈弘达; 王真真; 解意洋; 耿照新
Rights Holder中国科学院半导体研究所
Date Available2014-08-20
Country中国
Subtype发明
Subject Area光电子学
Application Date2014-04-21
Application NumberCN201410164442.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25704
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
陈弘达,王真真,解意洋,等. 表面等离激元增强型硅纳米线电致发光器件及其制作方法.
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表面等离激元增强型硅纳米线电致发光器件及(431KB) 限制开放LicenseApplication Full Text
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