SEMI OpenIR  > 中科院半导体材料科学重点实验室
双全息曝光制备量子级联激光器掩埋双周期光栅方法
姚丹阳; 张锦川; 闫方亮; 刘俊岐; 王利军; 刘峰奇; 王占国
Rights Holder中国科学院半导体研究所
Date Available2013-05-08
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-01-25
Application NumberCN201310028764.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25685
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
姚丹阳,张锦川,闫方亮,等. 双全息曝光制备量子级联激光器掩埋双周期光栅方法.
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