SEMI OpenIR  > 纳米光电子实验室
大面积表面增强拉曼活性基底的倾斜生长制备方法
宋国峰; 王立娜; 胡海峰; 徐云; 韦欣
Rights Holder中国科学院半导体研究所
Date Available2013-09-04
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-04-19
Application NumberCN201310136482.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25645
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
宋国峰,王立娜,胡海峰,等. 大面积表面增强拉曼活性基底的倾斜生长制备方法.
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