SEMI OpenIR  > 中科院半导体材料科学重点实验室
实现半导体量子阱结构带隙蓝移的方法
黄永光; 朱洪亮; 崔晓
Rights Holder中国科学院半导体研究所
Date Available2013-08-07
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-04-28
Application NumberCN201310154324.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25632
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
黄永光,朱洪亮,崔晓. 实现半导体量子阱结构带隙蓝移的方法.
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