SEMI OpenIR  > 纳米光电子实验室
一种PDLC压光效应光纤传感器及其制备方法
周州; 耿红艳; 宋国峰; 徐云; 范志新
Rights Holder中国科学院半导体研究所
Date Available2013-10-02
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-06-07
Application NumberCN201310225135.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25571
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
周州,耿红艳,宋国峰,等. 一种PDLC压光效应光纤传感器及其制备方法.
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