SEMI OpenIR  > 中科院半导体材料科学重点实验室
制备T相BiFeO3薄膜的方法
赵亚娟; 尹志岗; 张兴旺; 付振; 吴金良
Rights Holder中国科学院半导体研究所
Date Available2014-01-29
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-10-15
Application NumberCN201310481726.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25512
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵亚娟,尹志岗,张兴旺,等. 制备T相BiFeO3薄膜的方法.
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制备T相BiFeO_sub_3__sub(318KB) 限制开放LicenseApplication Full Text
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