SEMI OpenIR  > 中科院半导体材料科学重点实验室
砷化镓基短波长量子点超辐射发光二极管; 砷化镓基短波长量子点超辐射发光二极管
梁德春; 李新坤; 金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 本发明涉及六种采用量子点材料为有源区的砷化镓基短波长超辐射发光二极管。这六种砷化镓基短波长量子点超辐射发光二极管包括砷化镓铝铟/砷化镓铝(InAlGaAs/AlGaAs)量子点超辐射发光二极管、砷化铝铟/砷化镓铝(InAlAs/AlGaAs)量子点超辐射发光二极管、砷化铟/砷化镓铝(InAs/AlGaAs)亚单层量子点超辐射发光二极管、啁啾结构砷化铟/砷化镓铝(InAs/AlGaAs)亚单层量子点超辐射发光二极管、砷化铟/砷化镓(InAs/GaAs)亚单层量子点超辐射发光二极管和啁啾结构砷化铟/砷化镓(InAs/GaAs)亚单层量子点超辐射发光二极管。以上六种超辐射发光二极管具有波长短、功率大、光谱宽等特点。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN102136534A
Language中文
Status公开
Application Number CN201110041984.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23492
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
梁德春,李新坤,金鹏,等. 砷化镓基短波长量子点超辐射发光二极管, 砷化镓基短波长量子点超辐射发光二极管. CN102136534A.
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