SEMI OpenIR  > 纳米光电子实验室
增强纳米三明治品质因子的结构; 增强纳米三明治品质因子的结构
付非亚; 王宇飞; 晏新宇; 刘安金; 周文君; 郑婉华
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种增强纳米三明治品质因子的结构,包括:一下金属层;一介质层,该介质层制作在下金属层上;一上金属层,该上金属层制作在介质层上;其是通过降低纳米三明治腔体的非辐射损耗的途径,提高纳米三明治腔体品质因子。
metadata_83纳米光电子实验室
Patent NumberCN102166845A
Language中文
Status公开
Application Number CN201110022714.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23455
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
付非亚,王宇飞,晏新宇,等. 增强纳米三明治品质因子的结构, 增强纳米三明治品质因子的结构. CN102166845A.
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