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飞秒激光光刻技术制备T型栅AiGaN/GaN_HEMT的研究
杜彦东
Subtype硕士
Thesis Advisor韩伟华
2012
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Date Available2012-06-25
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23178
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
杜彦东. 飞秒激光光刻技术制备T型栅AiGaN/GaN_HEMT的研究[D]. 北京. 中国科学院研究生院,2012.
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杜彦东--飞秒激光光刻制备T型栅GaN_(2344KB) 限制开放LicenseApplication Full Text
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