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低阻p-GaN欧姆接触电极制备方法
林孟喆; 曹青; 颜庭静; 陈良惠
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种低阻p-GaN欧姆接触电极制备方法,该方法包括:取一衬底,在衬底上生长一器件外延层;对器件外延层进行表面清洗;采用腐蚀剂将器件外延层表面的氧化物去除;光刻,将光刻板上的图形转移到器件外延层上;在器件外延层的表面生长透明电极层;剥离、退火,使透明电极层发生反应,在透明电极层的表面形成高阻层;将发生反应的透明电极层表面的高阻层去除;在透明电极层的表面依次生长连接层和电极加厚层。
metadata_83纳米光电子实验室
Patent NumberCN200910080069.9
Language中文
Status公开
Application NumberCN200910080069.9
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22455
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
林孟喆,曹青,颜庭静,等. 低阻p-GaN欧姆接触电极制备方法. CN200910080069.9.
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