SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种制备高速电吸收调制器的方法
张伟; 潘教青; 汪洋; 朱洪亮
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明公开了一种制备高速电吸收调制器的方法,采用量子阱混杂方法,一次外延生长实现有源波导与无源波导集成,同时采用行波电极以进一步提高调制速率,具有高调制速率、低插入损耗、高光饱和吸收功率和偏振不灵敏等特性。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN200810225782.3
Language中文
Status公开
Application NumberCN200810225782.3
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22293
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张伟,潘教青,汪洋,等. 一种制备高速电吸收调制器的方法. CN200810225782.3.
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CN200810225782.3.pdf(681KB) 限制开放--Application Full Text
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