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氮化镓系发光二极管
马平; 李京波; 王军喜; 王国宏; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种氮化镓系发光二极管,包括:一衬底;一氮化镓成核层,该氮化镓成核层制作在衬底上;一缓冲层制作在成核层上;一n型接触层制作在缓冲层上,该n型接触层由n型氮化镓构成;一活性发光层制作在n型接触层上并覆盖所述n型接触层的部分表面,所述活性发光层是由铟镓氮薄层和氮化镓薄层交互层叠形成的多周期的量子阱结构构成;一负电极制作在n型接触层未被所述活性发光层覆盖的表面上;一p型铝镓氮插入层制作在活性发光层上;一p型电子阻挡层制作在p型铝镓氮插入层上,该p型电子阻挡层由铝镓氮构成;一p型接触层制作在p型电子阻挡层上,该p型接触层由p型氮化镓构成;一正电极制作在p型接触层上,完成氮化镓系发光二极管的制作。
metadata_83中科院半导体照明研发中心
Patent NumberCN201010157611.9
Language中文
Status公开
Application NumberCN201010157611.9
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22147
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
马平,李京波,王军喜,等. 氮化镓系发光二极管. CN201010157611.9.
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