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采用光陷阱超小发散角高功率半导体激光器外延材料结构
王俊; 白一鸣; 崇锋; 熊聪; 仲莉; 韩淋; 王翠鸾; 冯小明; 刘媛媛; 刘素平; 马骁宇
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种采用光陷阱超小发散角高功率半导体激光器外延材料结构,包括:一衬底,用于在其上进行激光器各层材料外延生长;一缓冲层,制作在GaAs衬底上;一N型下限制层,制作在缓冲层上;一下渐变光陷阱层,制作在N型下限制层上;一上渐变光陷阱层,制作在下渐变光陷阱层上;一N型上限制层,制作在下渐变光陷阱层上;一N型渐变波导层,制作在N型下限制层上;一量子阱有源区,制作在N型渐变波导层上;一P型渐变波导层,制作在量子阱有源区上;一P型限制层,制作在P型渐变波导层上;一电极接触层,制作在P型限制层上。
metadata_83光电子器件国家工程中心
Patent NumberCN200910084036.1
Language中文
Status公开
Application NumberCN200910084036.1
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22105
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
王俊,白一鸣,崇锋,等. 采用光陷阱超小发散角高功率半导体激光器外延材料结构. CN200910084036.1.
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