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实现半导体超辐射发光二极管无制冷封装耦合的方法
谭满清; 孙孟相
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种实现半导体超辐射发光二极管无制冷封装耦合的方法,其特征在于,该方法包括:在长方体管壳的底部焊接一散热基座;在散热基座上靠近管壳后壁处焊接上一热沉;将半导体超辐射发光二极管的管芯衬底垂直焊接在该热沉上;从该长方体管壳前壁耦合出出光尾纤,从长方体管壳的侧壁或后壁引出管芯驱动电流的正负极两只管脚;将该长方体管壳置于封焊机的全氮气氛围中,对该长方体管壳进行半导体超辐射发光二极管管芯的无制冷封装。
metadata_83集成光电子学国家重点实验室
Patent NumberCN200810224108.3
Language中文
Status公开
Application NumberCN200810224108.3
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22087
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
谭满清,孙孟相. 实现半导体超辐射发光二极管无制冷封装耦合的方法. CN200810224108.3.
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