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硅基化合物半导体激光器的制作方法
于丽娟; 杜云; 赵烘泉; 黄永箴
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种硅基化合物半导体激光器的制作方法,包括:在N型磷化铟衬底上形成磷化铟激光器基片;将一N型硅片与上述激光器基片键合、退火,去掉N型磷化铟衬底及P型缓冲层,形成复合片;刻蚀P型欧姆接触层、第一P型覆盖层和腐蚀停止层的两侧,形成脊形波导;在脊形波导两侧制备绝缘隔离层;在脊形波导的顶部制备P型金属电极;刻蚀距脊形波导一侧部分的绝缘隔离层、第二P型覆盖层、本证波导层、有源区本证量子阱、本证波导层和N型波导层,露出N型覆盖层,形成N电极窗口;在N电极窗口上制备N型金属电极;将N型硅片减薄;解理形成单个管芯;将管芯焊接到铜热沉上,在热沉上制备一微晶玻璃,并连线;完成硅基化合物半导体激光器的制作。
metadata_83集成光电子学国家重点实验室
Patent NumberCN200910091403.0
Language中文
Status公开
Application NumberCN200910091403.0
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22035
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
于丽娟,杜云,赵烘泉,等. 硅基化合物半导体激光器的制作方法. CN200910091403.0.
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