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一种绝缘体上的硅基光栅耦合器及其制作方法
朱宇; 李智勇; 俞育德; 余金中
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种绝缘体上的硅基光栅耦合器,所述耦合器采用绝缘体上的硅材料,包括:一硅衬底;一限制层,该限制层制作在硅衬底上;一顶硅层,该顶硅层制作在限制层上,在该顶硅层的表面制作有光栅,在该顶硅层一侧靠近光栅处为锥形波导,该锥形波导大于80μm,与锥形波导连接处为亚微米波导;一光纤,该光纤的一端靠近顶硅层上的光栅。
metadata_83集成光电子学国家重点实验室
Patent NumberCN201010121742.1
Language中文
Status公开
Application NumberCN201010121742.1
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21957
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
朱宇,李智勇,俞育德,等. 一种绝缘体上的硅基光栅耦合器及其制作方法. CN201010121742.1.
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