SEMI OpenIR  > 集成光电子学国家重点实验室
非直线锥形倒锥耦合器结构
任光辉; 陈少武
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract本发明提供一种非直线锥形倒锥耦合器结构,包括:一硅衬底;一埋氧层,该埋氧层制作在衬底上,该埋氧层的材料为二氧化硅;一顶层硅,该顶层硅制作在埋氧层上,可以有效的防止光泄漏到衬底中,该顶层硅的一端为条形波导,另一端为倒锥耦合器,其中该倒锥耦合器为渐变的指数型或二次方型结构,该倒锥耦合器的工作波长为1500nm到1600nm,其插入损耗的波动小于0.3dB。
metadata_83集成光电子学国家重点实验室
Patent NumberCN201010207340.3
Language中文
Status公开
Application NumberCN201010207340.3
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21915
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
任光辉,陈少武. 非直线锥形倒锥耦合器结构. CN201010207340.3.
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