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绝缘体上硅的缓变阶梯型波导光栅耦合器及制作方法
周亮; 李智勇; 俞育德; 余金中
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种绝缘体上硅的波导光栅耦合器,所述耦合器采用绝缘体上硅材料,包括:一衬底;一限制层,该限制层制作在衬底上;一波导层,该波导层制作在限制层上,该波导层上面的一端横向制作有衍射光栅;一光子器件,该光子器件的光发射端或接收端置于波导层上的衍射光栅的上方。
metadata_83集成光电子学国家重点实验室
Patent NumberCN201010283558.7
Language中文
Status公开
Application NumberCN201010283558.7
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21895
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
周亮,李智勇,俞育德,等. 绝缘体上硅的缓变阶梯型波导光栅耦合器及制作方法. CN201010283558.7.
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