SEMI OpenIR  > 半导体超晶格国家重点实验室
可实现自旋存储探测和光探测器复合功能的器件
孙晓明; 郑厚植; 甘华东; 申超
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种可实现自旋存储探测和光探测器复合功能的器件,包括:一砷化镓衬底;一砷化镓缓冲层,该砷化镓缓冲层生长在砷化镓衬底上;一微腔结构,该微腔结构生长在砷化镓缓冲层上。本发明可实现自旋存储探测和光探测器复合功能的器件结构,运用这种器件结构,可以在一个器件结构中实现自旋的存储、自旋的探测以及光探测三种功能。
metadata_83半导体超晶格国家重点实验室
Patent NumberCN200910083493.9
Language中文
Status公开
Application NumberCN200910083493.9
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21873
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
孙晓明,郑厚植,甘华东,等. 可实现自旋存储探测和光探测器复合功能的器件. CN200910083493.9.
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