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具有低暗电流特性的谐振腔增强型光电探测器
孙晓明; 郑厚植; 章昊
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种具有低暗电流特性的谐振腔增强型光电探测器,包括:一砷化镓衬底;一砷化镓缓冲层生长在砷化镓衬底上;一谐振腔结构生长在砷化镓缓冲层上;一有源区生长在腔体下砷化镓层上,包括交替生长的铟镓砷量子点和砷化镓间隔层;一腔体中砷化镓层生长在有源区上;一势垒结构生长在腔体中砷化镓层上,包括依次生长的下铝镓砷层、砷化铝层、上铝镓砷层以及铝镓砷渐变层,其中下铝镓砷层和上铝镓砷层的组成成份都为Al0.45Ga0.55As,铝镓砷渐变层的组成成份为AlXGa1-XAs,沿着生长方向,X由0.45渐变至0;一腔体上砷化镓层生长在势垒结构上;一上反射镜生长在腔体上砷化镓层上,包括依次生长的上反射镜砷化铝层和上反射镜砷化镓层。
metadata_83半导体超晶格国家重点实验室
Patent NumberCN200910237780.0
Language中文
Status公开
Application NumberCN200910237780.0
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21857
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
孙晓明,郑厚植,章昊. 具有低暗电流特性的谐振腔增强型光电探测器. CN200910237780.0.
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