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题名: Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
作者: Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H
出版日期: 1998
会议日期: SEP 08-11, 1997
摘要: We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.
会议名称: 24th IEEE International Symposium on Compound Semiconductors
KOS主题词: Shallow donors
会议文集: COMPOUND SEMICONDUCTORS 1997, 156
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Jiang DS; Ramsteiner M; Brandt O; Ploog KH; Tews H; Graber A; Averbeck R; Riechert H .Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate .见:IOP PUBLISHING LTD .COMPOUND SEMICONDUCTORS 1997, 156,TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX ,1998,211-214
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