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题名: Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
作者: Pan Z;  Zhang Y;  Du Y;  Wu RH
出版日期: 1998
会议日期: OCT 07-09, 1997
摘要: The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.
会议名称: 6th Microoptics Conference / 14th Topical Meeting on Gradient-Index Optical Systems (MOC/GRIN 97)
KOS主题词: Semiconductor lasers;  SELECTIVE OXIDATION;  Stability;  Wet oxidation;  Microstructure
会议文集: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Pan Z; Zhang Y; Du Y; Wu RH .Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser .见:JAPAN J APPLIED PHYSICS .JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B),DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN ,1998,3673-3675
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