Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.
会议名称:
2nd International Conference on Low Dimensional Structures and Devices
Sun BQ; Liu ZX; Jiang DS .Formation mechanism of electric field domains .见：ELSEVIER SCIENCE BV .MICROELECTRONIC ENGINEERING, 43-4,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1998,733-737
