Formation mechanism of electric field domains

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	Formation mechanism of electric field domains
	Sun BQ; Liu ZX; Jiang DS; Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China.
	1998
Conference Name	2nd International Conference on Low Dimensional Structures and Devices
Source Publication	MICROELECTRONIC ENGINEERING, 43-4
Pages	733-737
Conference Date	MAY 19-21, 1997
Conference Place	LISBON, PORTUGAL
Publication Place	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Publisher	ELSEVIER SCIENCE BV
ISSN	0167-9317
metadata_83	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 10083, peoples r china; chinese acad sci, inst phys, beijing 100080, peoples r china
Abstract	Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.
Keyword	Electric Field Domains Gamma-gamma Resonant Tunnelling Gamma-x Resonant Tunnelling
Subject Area	半导体物理
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/15067
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China.
Recommended Citation GB/T 7714	Sun BQ,Liu ZX,Jiang DS,et al. Formation mechanism of electric field domains[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:733-737.

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