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Formation mechanism of electric field domains | |
Sun BQ; Liu ZX; Jiang DS![]() | |
1998 | |
Conference Name | 2nd International Conference on Low Dimensional Structures and Devices |
Source Publication | MICROELECTRONIC ENGINEERING, 43-4 |
Pages | 733-737 |
Conference Date | MAY 19-21, 1997 |
Conference Place | LISBON, PORTUGAL |
Publication Place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Publisher | ELSEVIER SCIENCE BV |
ISSN | 0167-9317 |
metadata_83 | chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 10083, peoples r china; chinese acad sci, inst phys, beijing 100080, peoples r china |
Abstract | Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved. |
Keyword | Electric Field Domains Gamma-gamma Resonant Tunnelling Gamma-x Resonant Tunnelling |
Subject Area | 半导体物理 |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/15067 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China. |
Recommended Citation GB/T 7714 | Sun BQ,Liu ZX,Jiang DS,et al. Formation mechanism of electric field domains[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:733-737. |
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