Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)
	Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG; Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico.
	1998
会议名称	14th Latin American Symposiumm on Solid State Physics
会议录名称	REVISTA MEXICANA DE FISICA, 44
页码	85-88
会议日期	JAN 11-16, 1998
会议地点	OAXACA, MEXICO
出版地	APARTADO POSTAL 70-348, COYOACAN 04511, MEXICO
出版者	SOCIEDAD MEXICANA DE FISICA
ISSN	0035-001X
部门归属	ctr invest opt ac, unidad aguascalientes, aguascalientes 20000, ags, mexico; zhongnan univ natl wuhan, dept comp sci, hubei 430074, peoples r china; ctr invest opt, leon 37000, gto, mexico; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.
关键词	Electrical-properties Ion-implantation Regrowth Silicon Layers
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15055
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico.
推荐引用方式 GB/T 7714	Zou LF,Acosta-Ortiz SE,Zou LX,et al. Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)[C]. APARTADO POSTAL 70-348, COYOACAN 04511, MEXICO:SOCIEDAD MEXICANA DE FISICA,1998:85-88.

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