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题名: Pressure behavior of deep centers in ZnSxTe1-x alloys
作者: Liu NZ;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Ge WK;  Sou IK
出版日期: 1999
会议日期: AUG 09-13, 1998
摘要: We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.
会议名称: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII)
KOS主题词: strains
会议文集: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK .Pressure behavior of deep centers in ZnSxTe1-x alloys .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1),MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY ,1999,163-169
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