AlGaInP visible quantum well lasers for information technology

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	AlGaInP visible quantum well lasers for information technology
	Yu JZ; Chen LH; Ma XY; Wang QM; Yu JZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	1st Czech-Chinese Workshop on Advanced Materials for Optoelectronics (AMFO 98)
会议录名称	CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5)
页码	791-796
会议日期	JUN 15-17, 1998
会议地点	PRAGUE, CZECH REPUBLIC
出版地	FYZIKALNI USTAV AV NA SLOVANCE 2, PRAGUE 180 40, CZECH REPUBLIC
出版者	CZECHOSLOVAK JNL OF PHYSICS
ISSN	0011-4626
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.
关键词	High-power Operation Diodes
学科领域	半导体物理
主办者	Inst Radio Engn & Electr.; Acad Sci Czech Republ, Prague.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15025
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yu JZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yu JZ,Chen LH,Ma XY,et al. AlGaInP visible quantum well lasers for information technology[C]. FYZIKALNI USTAV AV NA SLOVANCE 2, PRAGUE 180 40, CZECH REPUBLIC:CZECHOSLOVAK JNL OF PHYSICS,1999:791-796.

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