Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice
	Sun BQ; Wang JN; Jiang DS; Wu JQ; Wang YQ; Ge WK; Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	5th International Conference on the Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5)
会议录名称	PHYSICA B, 279 (1-3)
页码	220-223
会议日期	JUN 21-25, 1999
会议地点	HONG KONG, HONG KONG
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0921-4526
部门归属	chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, hong kong, peoples r china
摘要	We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneling processes of electric field domains in doped weakly coupled GaAs/AlAs superlattices. Three regimes, i.e, stable field domains, current self-sustained oscillations and averaged field distribution are successively observed with increasing B. The mechanisms of switching-over among these regimes are due to B-induced modification of the dependence of the effective electron drift velocity on electric field. The simulated calculation gives a good agreement with the observed experimental results. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
关键词	Transverse Magnetic Field Field Domains Self-sustained Oscillations Semiconductors
学科领域	半导体物理
主办者	Lee Hysan Fdn.; Croucher Fdn.; KC Wong Educ Fdn.; Schlumberger Doll Res.; ARO FE.; AFOSR AOARD.; ONRASIA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15009
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun BQ,Wang JN,Jiang DS,et al. Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:220-223.

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