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题名: Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
作者: Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH
出版日期: 2000
会议日期: JUN 13-18, 1999
摘要: The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.
会议名称: International Conference on Advanced Materials: Sympopsium M - Silicon-based Materials and Devices
KOS主题词: Epitaxy;  carrier density
会议文集: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang QY; Nie JP; Yu F; Liu ZL; Yu YH .Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy .见:ELSEVIER SCIENCE SA .MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3),PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,2000,189-192
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