高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: Mechanism on exciton-mediated energy transfer in erbium-doped silicon
作者: Lei HB;  Yang QQ;  Ou HY;  Wang QM
出版日期: 2000
会议日期: JUN 13-18, 1999
摘要: Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.
会议名称: International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
KOS主题词: Photoluminescence;  Energy transfer;  Erbium;  Electroluminescence;  Epitaxy;  Gallium arsenide
会议文集: OPTICAL MATERIALS, 14 (3)
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
2956.pdf229KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Lei HB; Yang QQ; Ou HY; Wang QM .Mechanism on exciton-mediated energy transfer in erbium-doped silicon .见:ELSEVIER SCIENCE BV .OPTICAL MATERIALS, 14 (3),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,255-258
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Lei HB]的文章
 [Yang QQ]的文章
 [Ou HY]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Lei HB]的文章
 [Yang QQ]的文章
 [Ou HY]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发