Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

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	Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
	Yang Z; Sou IK; Chen YH; Yang Z Hong Kong Univ Sci & Technol Adv Mat Res Inst Clearwater Bay Kowloon Hong Kong Peoples R China.
	2000
会议名称	27th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27)
会议录名称	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (4)
页码	2271-2273
会议日期	JAN 16-20, 2000
会议地点	SALT LAKE CITY, UTAH
出版地	2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
出版者	AMER INST PHYSICS
ISSN	1071-1023
部门归属	hong kong univ sci & technol, adv mat res inst, kowloon, hong kong, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china
摘要	We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].
关键词	Reflectance Difference Spectroscopy Znse/gaas Interface States Gaas
学科领域	半导体物理
主办者	Amer Vacuum Soc.; USA, Off Res.; USN, Off Res.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14965
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yang Z Hong Kong Univ Sci & Technol Adv Mat Res Inst Clearwater Bay Kowloon Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Yang Z,Sou IK,Chen YH,et al. Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates[C]. 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,2000:2271-2273.

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