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题名: In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
作者: Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH
出版日期: 2000
会议日期: JUN 05-09, 2000
摘要: The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.
会议名称: 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
KOS主题词: atomic layer deposition;  Photoluminescence;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Photography--Films;  Finite volume method;  Aluminum oxide
会议文集: JOURNAL OF CRYSTAL GROWTH, 221
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH .In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 221,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,356-361
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