Self-assembled quantum dots, wires and quantum-dot lasers
Wang ZG; Chen YH; Liu FQ; Xu B; Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
2001
会议名称11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称JOURNAL OF CRYSTAL GROWTH, 227
页码1132-1139
会议日期SEP 11-15, 2000
会议地点BEIJING, PEOPLES R CHINA
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0022-0248
部门归属chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.
关键词Low Dimensional Structures Strain Molecular Beam Epitaxy Quantum Dots Semiconducting Iii-v Materials Laser Diodes Well Lasers
学科领域半导体材料
主办者China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14957
专题中国科学院半导体研究所(2009年前)
通讯作者Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Wang ZG,Chen YH,Liu FQ,et al. Self-assembled quantum dots, wires and quantum-dot lasers[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:1132-1139.
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