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题名: Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
作者: Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: characterization;  Defects;  X-ray crystallography;  atomic layer deposition;  Nitrides;  Gallium arsenide
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH .Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,527-531
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