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| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy | |
| Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. | |
| 2001 | |
| Conference Name | 11th International Conference on Molecular Beam Epitaxy (MBE-XI) |
| Source Publication | JOURNAL OF CRYSTAL GROWTH, 227 |
| Pages | 527-531 |
| Conference Date | SEP 11-15, 2000 |
| Conference Place | BEIJING, PEOPLES R CHINA |
| Publication Place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Publisher | ELSEVIER SCIENCE BV |
| ISSN | 0022-0248 |
| metadata_83 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| Abstract | The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved. |
| Keyword | Characterization Defects X-ray Diffraction Molecular Beam Epitaxy Nitrides Gaas |
| Subject Area | 光电子学 |
| Funding Organization | China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. |
| Indexed By | CPCI-S |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/14945 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. |
| Recommended Citation GB/T 7714 | Li LH,Pan Z,Zhang W,et al. Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:527-531. |
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| File Name/Size | DocType | Version | Access | License | ||
| 2918.pdf（109KB） | 限制开放 | -- | Application Full Text | |||
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