Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

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	Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering
	Liu JW; Xie FQ; Zhong DY; Wang EG; Liu WX; Li SF; Yang H; Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
	2001
Conference Name	Chinese-German Workshop on Characterization and Development on Nanosystems
Source Publication	CHINESE PHYSICS, 10
Pages	S36-S39
Conference Date	OCT 30-NOV 02, 2000
Conference Place	BEIJING, PEOPLES R CHINA
Publication Place	P O BOX 603, BEIJING 100080, PEOPLES R CHINA
Publisher	CHINESE PHYSICAL SOC
ISSN	1009-1963
metadata_83	chinese acad sci, inst phys, state key lab surface phys, beijing 100080, peoples r china; tianjin univ, sch mat sci & engn, tianjin 300072, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
Abstract	Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.
Keyword	Luminescence Sic Nanocrystalline Film Rf Sputtering Raman-scattering
Subject Area	半导体材料
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/14925
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
Recommended Citation GB/T 7714	Liu JW,Xie FQ,Zhong DY,et al. Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering[C]. P O BOX 603, BEIJING 100080, PEOPLES R CHINA:CHINESE PHYSICAL SOC,2001:S36-S39.

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